Product Description
Product Description:
S1337-66BQ Infrared Silicon Photodiode Is Used For Precise Photometric Determination In Ultraviolet To Infrared Band
Features:
Suitable for precise photometric determination from ultraviolet to infrared band
High UV sensitivity: QE = 75% (λ=200 nm)
Low capacitance
Measurement conditions: Ta=25 ℃, Typ., Unless otherwise noted, Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Rise time: VR=0 V, Terminal capacitance: VR=0 V, f=10 kHz
Specifications:
Peak sensitivity wavelength (typical value) 960 nm
Sensitivity (typical value) 0.5 A/W
Dark current (maximum) 100 pA
Rise time (typical value) 1 mu s
Junction capacitance (typical value)
380 pF
S1337-66BQ Infrared Silicon Photodiode Is Used For Precise Photometric Determination In Ultraviolet To Infrared Band
Features:
Suitable for precise photometric determination from ultraviolet to infrared band
High UV sensitivity: QE = 75% (λ=200 nm)
Low capacitance
Measurement conditions: Ta=25 ℃, Typ., Unless otherwise noted, Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Rise time: VR=0 V, Terminal capacitance: VR=0 V, f=10 kHz
Specifications:
Peak sensitivity wavelength (typical value) 960 nm
Sensitivity (typical value) 0.5 A/W
Dark current (maximum) 100 pA
Rise time (typical value) 1 mu s
Junction capacitance (typical value)
380 pF
